Institut des
NanoSciences de Paris
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Publications

 

 

 

2010

« Thin film depth profiling using simultaneous particle backscattering and nuclear resonance profiling. », N.P. Barradas, R. Mateus, M. Fonseca, M.A. Reis, K. Lorenz, and I. Vickridge.
Nucl. Instr. and Meth. B (2010) 268(11-12) : p. 1829-1832.

« Direct measurement of molecular breakup dynamics and vicinage effect of swift proton clusters using narrow nuclear resonance profiling. », A. L’Hoir, J.J. Ganem, I. Trimaille and I. Vickridge.
Nucl. Instr. And Meth. B. (2010) 268(17-18) p.2850-2853.

2009

« An 18O study of the interaction between carbon monoxide and dry thermal SiO2 at 1100°C. », Catherine Deville Cavellin, Isabelle Trimaille, Jean-Jacques Ganem, Marie D’Angelo, Ian Vickridge, Anita Pongracz and Gabor Battistig.
Journal of Applied Physics (2009), 105, 033501.

« Isotopic tracing study of the growth of silicon carbide nano-crystals at the SiO2/Si interface by CO annealing. », A. Pongracz, Y. Hoshino, M. D’Angelo, C. Deville Cavellin, J.-J. Ganem, I. Trimaille, G. Battistig, K.V. Josepovits, I. Vickridge.
Journal of Applied Physics (2009) 106, 024302.

« Charge exchange of medium energy H and He ions emerging from solid surfaces. », Y. Kitsudo, K. Shibuya, T. Nishimura, Y. Hoshino, I. Vickridge, Y. Kido.
Nucl. Instr. and Meth. B (2009) 267(4) 566.

2008

« Two and/or three dimensional Au nano-clusters on oxide supports analyzed by high-resolution ion scattering. », A. Iwamoto, T. Okazawa, T. Akita, I. Vickridge, and Y. Kido.
Nucl. Instr. and Meth. B (2008) 266(6) 965.

« Status of the problem of nuclear cross section data for IBA. », I. Bogdanovic-Radovic, M. Chiari, A. Gurbich, C. Jeynes, M. Kokkoris, M. Mayer, A.R. Ramos, E. Rauhala, O. Schwerer, Shi Liqun, I. Vickridge.
Nucl. Instr. and Meth. B (2008) 266(8) 1198.

« Size-dependent thermo-optical properties of embedded Bi nanostructures. », E. Haro-Poniatowski, R. Serna, de Castro, M. Jimenez, A. Suarez-Garcia, C. Afonso, I. Vickridge.
Nanotechnology (2008) 19(48) 485708.

« Li-ion intercalation in thermal oxide thin films of MoO3 as studied by XPS, RBS, and NRA. », J. Swiatowska-Mrowiecka, de Diesbach S, Maurice V, S. Zanna, L. Klein, E. Briand, I. Vickridge and P. Marcus.
Journal of Physical Chemistry C. (2008) 112(29) 11050.

« Kinetics and mechanisms of iron redox reactions in silicate melts : The effects of temperature and alkali cations », Magnien V, Neuville DR, Cormier L, J. Roux, J.-L. Hazemann, D. de Ligny, S. Pascarelli, I. Vickridge, O. Pinet and P. Richet.
Geochimica et Cosmochimica Acta (2008) 72(8) 2157.

2007

« Growth of SiO2 on SiC by dry thermal oxidation : mechanisms. », I. Vickridge, J. Ganem, Y. Hoshino, I. Trimaille.
J. Phys. D. (2007) 40, 6254-6263 (Article de review invitée pour le ‘Cluster Issue on wide bandgap semiconductors’).

« Characterization and optimization of magnetron sputtered Sc/Si multilayer for extreme ultraviolet optics. », J. Gautier, F. Delmotte, F. Bridou, M. F. Ravet, F. Varnière, M. Roulliay, A. Jerome and I. Vickridge,
Appl. Phys. A. (2007) 88, 719-725

« Ageing of V2O5 thin films induced by Li intercalation multi-cycling. », J. Światowska-Mrowiecka, V. Maurice, S. Zanna, L. Klein, E. Briand, I. Vickridge, P. Marcus.
J. Power Sources. (2007) 170(1), 160-172
Book Review : Ion Beam Science : Solved and Unsolved Problems. Ed. P. Sigmund ; I. C. Vickridge, Nucl. Instr. and Meth. B. (2007) 262, 407-408.

2006

« TaSiN diffusion barriers deposited by reactive magnetron sputtering. », F. Letendu, M.C. Hugon, B. Agius, I. Vickridge, C. Berthier and J.M. Lameille.
Thin Solid Films 513 (2006) 118-124.

« Radiation Damage in Zirconia investigated by Positively Charged Particles. », R.I. Grynszpan, G. Brauer, W. Anwand, L. Malaquin, S. Saudé, I. Vickridge, E. Briand.
Nucl. Instr. And Meth. B (2007) 261 (1-2) 888-891.

« Thermal ammonia nitridation on HfO2 and Hafnium silicates thin films. », J.-J. Ganem, I. Trimaille, I. C. Vickridge and E.P. Gusev.
Nucl. Instr. and Meth. B (2006) 249 (1-2) 517-522.

2005

« Influence of substrate temperature on growth of nanocrystalline silicon carbide by reactive magnetron sputtering. », H. Colder, R. Rizk, M. Morales, P. Marie, J. Vicens and I. Vickridge.
J. Appl. Phys. 98, 024313, 2005.

« Characterisation of SiC thin film obtained by magnetron reactive sputtering. » H. Colder, M. Morales, R. Rizk and I. Vickridge.
Mats. Sci. For. 485, 297 (2005).

« The contribution of stable isotopic tracing, narrow nuclear resonance depth profiling, and a simple stochastic theory of charged particle energy loss to studies of the dry thermal oxidation of SiC. », I. C. Vickridge, J. J. Ganem, I. Trimaille, and J.-L. Cantin.
Nucl. Instr. and Meth. B 232 (2005) 272-279.

« A round robin characterization of the thickness and composition of thin to ultra-thin AlNO films. », N.P. Barradas, N. Added, W.M. Arnoldbik, I. Bogdanović-Radović, W. Bohne, S. Cardoso, C. Danner, N. Dytlewski, P.P. Freitas, M. Jakšić, C. Jeynes, C. Krug, W.N. Lennard, S. Lindner, Ch. Linsmeier, Z. Medunić, P. Pelicon, R. P. Pezzi, C. Radtke, J. Röhrich, T. Sajavaara, T.D.M. Salgado, F.C. Stedile, M.H. Tabacniks, I. Vickridge.
Nucl. Instr. And Meth. B. 227 (2005) 397-419.

« On the control of the reactivity at the metal silica interface. », I. Jarrige, P. Jonnard and I. Vickridge.
Appl. Phys. Lett. (2005) 86 (20) 204105, 1-3

« Controlling energy transfer from Er3+ to Tm3+ for improved broadband infrared emission in Er-Tm : Al2O3 thin films. », Zhisong Xiao, R. Serna, C.N. Afonso and I. Vickridge.
Appl. Phys. Lett. (2005) 87, 111103.

« Modification of the oxide/semiconductor interface by high temperature NO treatments : a combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC. », H. J. von Bardeleben, J.L. Cantin, I.C. Vickridge, Yongwei Song, S. Dhar, L.C. Feldman, J. R. Williams, L. Ke, Y. Shishkin, R.P. Devaty, W. J. Choyke.
Mats. Sci. For. 483-485 : (2005) 277-80.

2004

« Study of Thin Hafnium Oxides Deposited by ALD. », J-J. Ganem, I. Trimaille, I. C. Vickridge, D. Blin, and F. Martin.
Nucl. Instr. And Meth. B. (2004) 219-220, Pages 856-861.

« Thermal oxidation of 6H SiC studied by oxygen isotopic tracing and narrow resonance profiling. », I. Trimaille, J.-J. Ganem, S.Rigo, I. C. Vickridge, G. Battistig, E. Szilagyi, and F.C. Stedile.
Nucl. Instr. And Meth. B (2004) 219-220, pp. 914-918.

« Nanostructuring the Er-Yb distribution to improve the photoluminescence response of thin films. », A. Suarez-Garcia, R. Serna, M. Jiménez de Castro, C.N. Afonso and I. Vickridge.
Appl. Phys. Lett. (2004) 84 (12) : 2151-2153.

« Critical Review of the current status of thickness measurements for ultra-thin SiO2 on Si Part V : Results of a CCQM pilot study. », M. P. Seah, S. J. Spencer, F. Bensebaa, I. Vickridge et 33 autres.
Surf. Interface Anal. (2004) 36 : 1269-1303.

2003

« Polarity dependent carbon enrichment on 6H-SiC 0001 due to low energy ion bombardment. », G. Battistig, J. L. Labar, S. Gurban, A. Sulyok, M. Menyhard, I. C. Vickridge, E. Szilagyi, J. Malherbe and Q. Odendaal.
Surface Science. (2003) 526 (1-2) L133-L136.

« Depth resolution and narrow resonance profiling. », I. C. Vickridge.
Current Applied Physics (2003) 3 (1) 51-55.

« Damage distributions induced by channeling implantation of nitrogen into 6H silicon carbide. », Z. Zolnai, N.Q. Khanh, T. Lohner, A. Ster, E. Kótai, I. Vickridge and J. Gyulai
Materials Science Forum, vols.433-436 (2003) pp.645-648.

« Thermal growth of SiO2 on SiC investigated by isotopic tracing and subnanometric depth profiling. », C. Radtke, I. Baumvol, F. C. Stedile, I. Vickridge, J. Ganem, I. Trimaille, S. Rigo.
Appl. Surf. Sci. (2003) 212-13 : 570-574.

2002

« Oxygen isotopic exchange occurring during dry thermal oxidation of 6H SiC. », I. C. Vickridge, D. Tromson, I. Trimaille, J.-J. Ganem, E.Szilágyi and G. Battistig.
Nucl. Instr. And Meth. B. 190 (2002) 574-578.

« Characterisation of lanthanum lithium titanate thin films deposited by radio frequency sputtering on [100]-oriented MgO substrates. », M. Morales, P. Laffez, D. Chateigner and I. Vickridge.
Thin Solid Films 418/2, 120-129 Oct 2002.

« Limiting step involved in the thermal growth of silicon oxide films on silicon carbide. » , I. C. Vickridge, I. Trimaille, J.-J. Ganem, S. Rigo, C. Radtke, I. J. R. Baumvol, and F. C. Stedile.
Phys. Rev. Lett. 89(24) 256102, Décembre 2002.

2001

« Effect of MeV energy He and N pre-implantation on the formation of porous silicon. », A. Manuaba, F. Paszti, C. Ortega, A. Grosman, Z.E. Horváth, E. Szilágyi, N. Q. Khánh and I. Vickridge.
Nucl. Instr. and Meth. B. 179 (2001) 63-70.

« Oxygen transport during annealing of Pb(Zr,Ti)O3 thin films in O2 gas and its effect on their conductivity. », F. Ayguavives, B. Agius, B. Ea-Kim, I. Vickridge.
J. Mater. Res. 16(10) 2001, 3005-3008.

« An 18O study of the oxidation of reactively sputtered Ti1-xAlxN barrier. », M.C. Hugon, F. Varnière, F. Letendu, B. Agius, I. Vickridge, A.I. Kingon. J.
Mater. Res. 16(9) 2001, 2591-2599.

« Photoluminescence performance of pulsed-laser deposited Al2O3 thin films with large erbium concentrations. », R. Serna, M. Jiménez de Castro, J. A. Chaos, A. Suárez-García, C. N. Afonso, M. Fernández and I. Vickridge.
Journal of Applied Physics, 90(10) (2001) 5120-5125.

« Applications of Ion Beam Analysis to the elemental and isotopic characterisation of advanced materials. », I. C. Vickridge.
Modern Physics Letters B 15 (28-29) 1271-1280. December 2001.

« Use of IBA techniques for the measurement of oxidation processes in sialon ceramics. », I. W. M. Brown, G. C. Barris, C. M. Sheppard, I. C. Vickridge and W. J. Trompetter.
Modern Physics Letters B 15 (28-29) 1305-1313. December 2001.

2000

« Silicon isotopic tracing with the 29Si(p,γ) narrow resonance near 415 keV. I. », C. Vickridge, O. Kaitasov, R. J. Chater and J. A. Kilner.
Nucl. Instr. And Meth B 161-163 (2000) 441-445.

« Oxygen isotopic tracing study of the dry thermal oxidation of 6H SiC. », I. C. Vickridge, J.-J. Ganem, G. Battistig, E. Szilagyi.
Nucl. Instr. And Meth B 161-163 (2000) 462-466.

« Narrow resonance profiling study of the oxidation of reactively sputtered TixAl1-xN thin films. », M. C. Hugon, I. C. Vickridge, D. J. Kim, A. I. Kingon.
Nucl. Instr. And Meth B 161-163 (2000) 578-583.

« Oxidation resistance of TaSiN diffusion barriers. », F. Letendu, M.-C. Hugon, J.-M. Desvignes, B. Agius, I. Vickridge, D.J. Kim, A.I. Kingon.
Integrated Ferroelectrics 31 no.1-4 (2000) 315-322.

« Artificially nanostructured Cu : Al2O3 films produced by pulsed laser ablation. », R. Serna, C.N. Afonso, C. Ricolleau, Y. Wang, Y. Zheng, M. Gandais, I. Vickridge.
Appl. Phys. A. 71 (2000), 583-586.

« The RBS surface yield as a calibration standard for RBS. », M. Bianconi, F. Abel, A. Climent-Font, C. Cohen, B. L. Doyle, R. Lotti, G. Lulli, R. Nipoti, I. Vickridge, D. Walsh and E. Wendler.
Nucl. Instr. And Meth B 161-163 (2000) 293-296.

« Proton Implantation induced defects in n-type 6H- and 4H-SiC : an electron paramagnetic resonance study. », H. J. von Bardeleben, J. L. Cantin, I. Vickridge and G. Battistig.
Phys. Rev. B 62 (15) (2000) 10126-10134.

« Oxydation thermique de 6HSiC (0001) et (000-1) en O2 ultra-pur : une étude par traçage avec isotopes stables. »
I. C. Vickridge, J.-J. Ganem, I. Trimaille, G. Battistig et E. Szilagyi. Le Vide les Couches Minces N° 297 (3-4) 488-496 (2000).